공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-06
Lifecycle StatusProduction (Last Updated: 3 months ago)
설명
유통업체에서 제공한 STMicroelectronics STP12NK30Z에 대한 설명입니다.
N-CHANNEL 300V 0.36 OHM 9A TO-220 ZENER-PROTECTED SUPER-MESH POWER MOSFET
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 300 V, 9 A, 0.4 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 9A I(D), 300V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time36 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)300 V