공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTP10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP11NK50Z에 대한 설명입니다.
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP
STP11NK50Z N-CHANNEL MOSFET TRANSISTOR, 10 A, 500 V, 3-PIN TO-220
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3
Power MOSFET, N Channel, 500 V, 10 A, 0.52 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=500 V, 10 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:10A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):520Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:3.75V |Stmicroelectronics STP11NK50Z
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.39 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max520 mΩ
Rise Time18 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14.5 ns
Voltage Rating (DC)500 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm