가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STI34N65M5 | 0 | 1K | 9h | ||||||||
| Microchip USA | STI34N65M5 | 1,952 | 300 | Tube | 4d | |||||||
| Win Source | WS-STI34N65M5 | 20 | 8 | 8h | ||||||||
| Worldway Electronics | STI34N65M5 | 27,228 | 7 | Tube | 7h | |||||||
| GreenTree Electronics | STI34N65M5 | 1,000 | 5h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-10-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
관련 부품
STMicroelectronicsSTI40N65M2
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package
InfineonIPI60R099CPXKSA1
Power MOSFET, N Channel, 650 V, 31 A, 90 Milliohms, TO-220, 3 Pins, Through Hole
InfineonIPI60R099CPAAKSA1
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube / CoolMOS Power Transistor
설명
유통업체에서 제공한 STMicroelectronics STI34N65M5에 대한 설명입니다.
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh(TM) V Power MOSFET in I2PAK package
Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) I2PAK Tube
Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N-CH 650V 28A I2PAKFP
new, original packaged
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time7.5 ns
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max110 mΩ
Rise Time8.7 ns