공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-03
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTI13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAK package
STMicroelectronicsSTFI15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in I2PAKFP package
STMicroelectronicsSTFI20NM65N
N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in I2PAKFP package
설명
유통업체에서 제공한 STMicroelectronics STI14NM50N에 대한 설명입니다.
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in I2PAK package
Trans MOSFET N-CH 500V 12A 3-Pin TO-262 Tube
MOSFET N CH 500V 12A I2PAK
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
new, original packaged
CAP CER 4700PF 2KV RADIAL
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance816 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max320 mΩ
Rise Time16 ns
Turn-Off Delay Time42 ns
Turn-On Delay Time10.2 ns