가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STH400N4F6-2 | 0 | 1K | 13h | ||||||||
| Mouser | 511-STH400N4F6-2 | 915 | 1 | Tape & Reel | ||||||||
| Microchip USA | STH400N4F6-2 | 123 | 600 | 4h | ||||||||
| Win Source | WS-STH400N4F6-2 | 2,900 | 1 | 12h | ||||||||
| Worldway Electronics | STH400N4F6-2 | 10,766 | 7 | Tape & Reel | 11h |
관련 부품
InfineonAUIRFS8409
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIRFS7430TRLPBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
InfineonAUIRFS8409TRL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
STMicroelectronicsSTH320N4F6-2
Power Field-Effect Transistor, 200A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTH360N4F6-2
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH410N4F7-2AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
설명
유통업체에서 제공한 STMicroelectronics STH400N4F6-2에 대한 설명입니다.
STH400N4F6-2 N-channel MOSFET Transistor, 180 A, 40 V, 3-Pin H2PAK-2
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
Single N-Channel 40 V 1.15 mOhm 404 nC 140 W Silicon SMT Mosfet - TO-263-3
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time168 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20.5 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max1.15 mΩ
Rise Time184 ns
Turn-Off Delay Time168 ns
Turn-On Delay Time71 ns
Dimensions
Height4.8 mm
Length10.4 mm
Width15.8 mm