가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-STGWA60V60DF-ND | 635 | 1 | Tube | ||||||||
| TME | STGWA60V60DF | 0 | 1 | 11h | ||||||||
| Avnet | STGWA60V60DF | 0 | 600 | 1d | ||||||||
| Future Electronics | STGWA60V60DF | 0 | 600 | Tube | ||||||||
| Mouser | 511-STGWA60V60DF | 768 | 1 | Tube |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-09-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-12-19
LTD Date2026-06-19
설명
유통업체에서 제공한 STMicroelectronics STGWA60V60DF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 80A 375W 3-Pin(3+Tab) TO-247 Tube
IGBT BIPO 600V 60A TO247-3 / IGBT Trench Field Stop 600 V 80 A 375 W Through Hole TO-247 Long Leads
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247
600 V, 60 A very high speed trench gate field-stop IGBT
Ciiva
Short-circuit rugged IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
Igbt |Stmicroelectronics STGWA60V60DF
IGBT Transistors PTD IGBT & IPM
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Forward Current60 A
Forward Voltage2 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1