가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STGW40NC60WD | 0 | 600 | 21h | ||||||||
| element14 APAC | STGW40NC60WD | 0 | 1 | 7h | ||||||||
| Farnell | STGW40NC60WD | 0 | 1 | 18h | ||||||||
| Win Source | WS-STGW40NC60WD | 4,000 | 15 | 19h | ||||||||
| Worldway Electronics | STGW40NC60WD | 9,820 | 7 | Tube | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiFGH40N60SMD
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
설명
유통업체에서 제공한 STMicroelectronics STGW40NC60WD에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
MOSFET, N-Ch, VDSS 600V, ID 70A, TO-247,PD 250W, VGS +/-20V, gFS 20S, Qg 126nC, VF 2.4V
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC
STMICROELECTRONICS STGW40NC60WD IGBT Single Transistor, 70 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins
IGBT 600V 70A 2.5V TO247-3 RoHSconf
Power MOSFET Transistors FAST N-CHANNEL
STMICROELECTRONICS STGW40NC60WD IGBTS
IGBT, N 600V 40A TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
IGBT, N 600V 40A TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:2.5V; Power Dissipation:250W; Case Style:TO-247; Termination Type:Through Hole; ;RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current40 A
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Input Capacitance2.9 nF
Max Collector Current70 A
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Reverse Recovery Time45 ns
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time168 ns
Turn-On Delay Time33 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm