관련 부품
onsemiNGTB40N60L2WG
IGBT TRENCH/FS 600V 80A TO247 / IGBT Trench Field Stop 600 V 80 A 417 W Through Hole TO-247-3
STMicroelectronicsSTGW40V60DLF
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
설명
유통업체에서 제공한 STMicroelectronics STGW40H60DLFB에 대한 설명입니다.
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
283W 80A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS
Igbt, 600V, 80A, 175Deg C, 283W; |Stmicroelectronics STGW40H60DLFB
Trans IGBT Chip N-CH 600V 80A 283W 3-Pin(3+Tab) TO-247 Tube
IGBT Transistors 600V 40A trench gate field-stop IGBT
STMicroelectronics IGBT, maximum 600 V, maximum 80 A
STGW40H60DLFB, IGBT TRANSISTOR, 80 A 600 V, 3-PIN TO-247
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
IGBT, 80 A, 1.6 V, 283 W, 600 V, TO-247, 3 Pins
IGBT TRENCH FS 600V 80A TO-247
TO247 IGBT 40A 600V TRENCH GAT
IGBT, 600V, 80A, 175DEG C, 283W; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation283 W
Min Operating Temperature-55 °C
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm