공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-07-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 STMicroelectronics STGW30V60F에 대한 설명입니다.
IGBT 600V 60A 260W TO247 / Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
TRANSISTOR, IGBT, 600V, 60A, TO-247; Available until stocks are exhausted
260W 60A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
Igbt |Stmicroelectronics STGW30V60F
晶体管, 晶体管, IGBT, 600V, 60A, TO-247;
TO247 IGBT 30A 600V TRENCH GAT
STGW30V60F, 30 A 600 V, 1MHZ, 3-PIN TO-247
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation260 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation260 W
Schedule B8541290080
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm