공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-03
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRG7PH35UPBF
IGBT 1200V 55A 210W TO247AC / IGBT Trench 1200 V 55 A 210 W Through Hole TO-247AC
STMicroelectronicsSTGWA30N120KD
IGBT 1200V 60A 220W TO247 / Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
InfineonIRG4PH50KPBF
Transistor; IGBT; TO-247 AB; 45 A (Max.); 1200 V (Max.); 200 W (Max.); -55 degC
설명
유통업체에서 제공한 STMicroelectronics STGW28IH125DF에 대한 설명입니다.
1250 V, 25 A IH series trench gate field-stop IGBT
Trans IGBT Chip N-CH 1250V 60A 375W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 60A I(C), 1250V V(BR)CES, N-Channel, TO-247
Igbt |Stmicroelectronics STGW28IH125DF
IGBT TRENCH FS 1250V 60A TO-247
375W 2V 2.5V@ 15V,25A 60A TO-247 20.15mm
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Base Breakdown Voltage (VCES)1.25 kV
Collector Emitter Breakdown Voltage1.25 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.25 kV
Element ConfigurationSingle
Forward Current30 A
Forward Voltage1.2 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1