공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-23
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
STMicroelectronicsSTGWT40V60DF
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
onsemiFGH40N60SMD
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
설명
유통업체에서 제공한 STMicroelectronics STGFW40V60DF에 대한 설명입니다.
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Trans IGBT Chip N-CH 600V 80A 62.5W 3-Pin(3+Tab) TO-3PF Tube
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
Short-circuit rugged IGBT, TO-3PF, Tube
STMicroelectronics SCT
Igbt |Stmicroelectronics STGFW40V60DF
IGBT TRENCH FS 600V 80A TO-3PF-3
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.961991 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Current40 A
Forward Voltage1.7 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation98.5 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time41 ns