공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiFGA6540WDF
IGBT 650V 80A 238W TO-3PN / Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3P Tube
STMicroelectronicsSTGP30M65DF2
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
InfineonIHW30N65R5XKSA1
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
설명
유통업체에서 제공한 STMicroelectronics STGFW40H65FB에 대한 설명입니다.
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3PF Tube
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
Short-circuit rugged IGBT, TO-3PF, Tube
STMicroelectronics SCT
Igbt |Stmicroelectronics STGFW40H65FB
IGBT Transistors PTD IGBT & IPM
IGBT TRENCH FS 650V 80A TO-3PF-3
62.5W 1.6V 650V 80A TO-3PF-3 26.7mm
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation62.5 W
Min Operating Temperature-55 °C
Number of Elements1