공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
관련 부품
onsemiSGP15N60RUFTU
IGBT 600V 24A 160W TO220 / Trans IGBT Chip N-CH 600V 24A 160000mW 3-Pin(3+Tab) TO-220 Rail
InfineonIRG4IBC30WPBF
IRG4IBC30WPbF Series 600 V 17 A Flange Mount N-Channel IGBT - TO-220 Full-Pak
STMicroelectronicsSTGF10NB60SD
STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP
설명
유통업체에서 제공한 STMicroelectronics STGF35HF60W에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-247 Tube
IGBT Transistors 35A 600V Ultrafast IGBT over 100kHz OP
12 A, 600 V Ultrafast IGBT
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel
IGBT 600V 19A 40W TO220FP
IGBT 12A (@100C) 600
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Weight2.299997 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current19 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-55 °C
Turn-Off Delay Time225 ns
Turn-On Delay Time30 ns