STMicroelectronics STGF30H65DFB2
$ 1
Obsolete
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-04-07
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2025-12-19
LTD Date2026-06-19
설명
유통업체에서 제공한 STMicroelectronics STGF30H65DFB2에 대한 설명입니다.
IGBT, 650V, 50A, 50W, TO-220FP; Available until stocks are exhausted
Trench gate field-stop 650 V, 30 A high speed HB2 IGBT, TO-220FP
Transistor IGBT Chip N-Channel 650V 30A 3-Pin TO-220FP Tube
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 650V, 50A, TO-220FP; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:50W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
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