설명
유통업체에서 제공한 STMicroelectronics STGD4M65DF2에 대한 설명입니다.
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBT Transistors / Modules ROHS
Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
M Series 650 V 8 A 68 W Surface Mount Trench Gate Field Stop IGBT - DPAK
Trans IGBT Chip N-CH 650V 8A 68W 3-Pin(2+Tab) DPAK T/R
68W 1.6V Freestanding 650V 8A DPAK SMD mount 2.63mm(height)
晶体管, IGBT, 650V, 8A, 175度 C, 68W;
TRENCH GATE FIELD-STOP IGBT, M S
IGBT, 650V, 8A, 175DEG C, 68W;
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Number of Terminals2
Technical
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current8 A
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Number of Elements1