공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
관련 부품
STMicroelectronicsSTFI7LN80K5
N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a I2PAKFP package
STMicroelectronicsSTFI6N62K3
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
onsemiFQI6N60CTU
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 STMicroelectronics STFI6N80K5에 대한 설명입니다.
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAKFP package
Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Ultra low gate charge | MOSFET N-CH 800V 4.5A I2PAK-FP
Ptd High Voltage
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Weight2.084002 g
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance270 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max1.6 Ω
Resistance1.3 Ω
Rise Time7.5 ns
Turn-Off Delay Time28.5 ns
Turn-On Delay Time16 ns