가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Mouser | 511-STFI40N60M2 | 126 | 1 | Tube | ||||||||
| Microchip USA | STFI40N60M2 | 389 | 300 | Tray | 16h | |||||||
| Win Source | WS-STFI40N60M2 | 6,510 | 6 | 23h | ||||||||
| Worldway Electronics | STFI40N60M2 | 23,247 | 7 | Tube | 22h | |||||||
| Aztech | STFI40N60M2 | 5,005 | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
관련 부품
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InfineonIPI60R099CPXKSA1
Power MOSFET, N Channel, 650 V, 31 A, 90 Milliohms, TO-220, 3 Pins, Through Hole
STMicroelectronicsSTI33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
InfineonIPI60R099CPAAKSA1
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube / CoolMOS Power Transistor
STMicroelectronicsSTI40N65M2
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package
설명
유통업체에서 제공한 STMicroelectronics STFI40N60M2에 대한 설명입니다.
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in I2PAKFP package
Trans MOSFET N-CH 600V 34A 3-Pin I2PAK FP Tube
MOSFET N-CH 600V 34A I2PAKFP
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281
CAP CER 33PF 50V C0G 0402
Ptd High Voltage
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.240009 g
Technical
Continuous Drain Current (ID)34 A
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max88 mΩ
Rise Time13.5 ns
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height10.8 mm
Length10.4 mm
Width4.6 mm