공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTI33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
STMicroelectronicsSTI33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in I2PAKFP package
설명
유통업체에서 제공한 STMicroelectronics STFI28N60M2에 대한 설명입니다.
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package
Trans MOSFET N-CH 650V 22A 3-Pin I2PAK FP Tube
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281
DIODE ARRAY SCHOTTKY 60V TO220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.44 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max150 mΩ
Resistance135 mΩ
Rise Time7.2 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time14.5 ns