공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-09
Lifecycle StatusObsolete (Last Updated: 6 months ago)
관련 부품
STMicroelectronicsSTI10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package
설명
유통업체에서 제공한 STMicroelectronics STFI11N65M2에 대한 설명입니다.
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in I2PAKFP package
STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) I2PAKFP Tube
Extremely low gate charge | MOSFET N-CH 650V 7A I2PAKFP
MOSFET, N CHANNEL, 650V, 7A, TO-281-3
MOSFET, N CHANNEL, 650V, 7A, TO-281-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Weight2.240009 g
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance670 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance410 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Number of Channels1
Rds On Max670 mΩ
Resistance600 mΩ
Rise Time7.5 ns
Threshold Voltage3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9.5 ns