공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPP17N25S3100AKSA1
250V, N-Ch, 100 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STF16NF25에 대한 설명입니다.
N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in TO-220FP package
STF16NF25 N-channel MOSFET Transistor, 14 A, 250 V, 3-Pin TO-220FP
Power MOSFET, N Channel, 250 V, 14 A, 235 mOhm, TO-220FP, 3 Pins, Through Hole
Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 250V, 13A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):195mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance235 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation25 W
Rds On Max235 mΩ
Rise Time17 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time9 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm