공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTF14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220FP package
VishaySIHF12N60E-GE3
33W(Tc) 30V 4V@ 250¦ÌA 58nC@ 10 V 1N 600V 380m¦¸@ 6A,10V 12A 937pF@100V TO-220 16.12mm
설명
유통업체에서 제공한 STMicroelectronics STF13NM60N에 대한 설명입니다.
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package
STF13NM60N N-CHANNEL MOSFET TRANSISTOR, 11 A, 600 V, 3-PIN TO-220FP
Single N-Channel 600 V 0.36 Ohm 27 nC 90 W Silicon Flange Mount Mosfet TO-220FP
Power MOSFET, N Channel, 600 V, 5.5 A, 0.28 ohm, TO-220FP, Through Hole
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
N-CHANNEL 600 VOLT, 280 MILLI OHM TYP., 11 AMP MDMESH II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 11A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
MOSFET N CH 600V 11A TO220FP; Transistor Polarity:N Channel; On Resistance Rds(on):0.28ohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; Continuous Drain Current Id:5.5A; Package / Case:TO-220FP; ;RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Manufacturer Package IdentifierTO-220FP-7012510
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation25 W
Rds On Max360 mΩ
Resistance280 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm