관련 부품
STMicroelectronicsSTF16N65M5
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220FP package
STMicroelectronicsSTF15NM65N
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package
STMicroelectronicsSTP13NK60ZFP
N-Channel 600 V, 0.48 Ohm, 13 A TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET
설명
유통업체에서 제공한 STMicroelectronics STF11NM80에 대한 설명입니다.
MOSFET, N CH, 800V, 11A, TO220FP; Transistor Polarity:N Channel; Continuous Drai
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220FP
MOSFET N-CH 800V 11A TO220FP / Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
STF11NM80 N-CHANNEL MOSFET TRANSISTOR, 11 A, 800 V, 3-PIN TO-220FP
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 800V, 11A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220FP; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.63 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage800 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation35 W
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time17 ns
Threshold Voltage4 V
Turn-Off Delay Time46 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)800 V
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm