가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STD60NF55LT4 | 1,371 | 1 | Cut Tape | ||||||||
| Verical | STD60NF55LT4 | 7,500 | 2500 | |||||||||
| Arrow Electronics | STD60NF55LT4 | 10,000 | 2500 | |||||||||
| TME | STD60NF55LT4 | 1,469 | 1 | 14h | ||||||||
| DigiKey | 497-15669-1-ND | 3,572 | 1 | Cut Tape |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonAUIRLR2905ZTRL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
STMicroelectronicsSTD60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD60NF55LT4에 대한 설명입니다.
STD60NF55LT4 N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-252
N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET
Power MOSFET, N Channel, 55 V, 30 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 60A DPAK
Power Field-Effect Transistor, 60A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, N Channel, 55V, 60A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:30A; Tensión Drenaje-Fuente Vds:55V; Resistencia De Activación Rds(On):12Mohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Stmicroelectronics STD60NF55LT4
MOSFET, N CH, 55V, 60A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 60A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 55V; Voltage Vgs Max: 15V; Voltage Vgs Rds on Measurement: 10V
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance1.95 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max15 mΩ
Rise Time180 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time80 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)55 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm