가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD5NM60T4 | 35,000 | 2500 | 20h | ||||||||
| Newark | STD5NM60T4 | 887 | 1 | Cut Tape | ||||||||
| Verical | STD5NM60T4 | 2,500 | 2500 | |||||||||
| Arrow Electronics | STD5NM60T4 | 1,547 | 1 | |||||||||
| DigiKey | 497-3163-1-ND | 6,788 | 1 | Cut Tape |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
onsemiFDD6N50TM-WS
Mosfet Transistor, N Channel, 6 A, 500 V, 0.76 Ohm, 10 V, 5 V |Onsemi FDD6N50TM_WS
STMicroelectronicsSTD7N52DK3
Mosfet Transistor, N Channel, 6 A, 525 V, 0.95 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
설명
유통업체에서 제공한 STMicroelectronics STD5NM60T4에 대한 설명입니다.
N-Channel 600V - 0.9Ohm - 8A MDmesh(TM) POWER MOSFET
Power MOSFET, N Channel, 650 V, 5 A, 1 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:96W; Power Dissipation Pd:96W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation96 W
Rds On Max1 Ω
Resistance1 Ω
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)600 V
Dimensions
Height2.4 mm
Length6.6 mm