관련 부품
InfineonIPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
STMicroelectronicsSTD2N105K5
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD2N95K5에 대한 설명입니다.
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
STD2N95K5 N-CHANNEL MOSFET TRANSISTOR, 2 A, 950 V, 3-PIN DPAK
Power Field-Effect Transistor, 2A I(D), 950V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)950 V
Element ConfigurationSingle
Fall Time32.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance105 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max5 Ω
Rise Time13.5 ns
Schedule B8541290080
Turn-Off Delay Time20.5 ns
Turn-On Delay Time8.5 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm