공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
STMicroelectronicsSTD30NF06T4
N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET
STMicroelectronicsSTD16NF06LT4
N-channel 60 V, 0.060 Ohm typ., 16 A STripFET II Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD20NF06T4에 대한 설명입니다.
N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package
STD20NF06T4 N-CHANNEL MOSFET TRANSISTOR, 24 A, 60 V, 3-PIN DPAK
N-Channel 60 V 0.04 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
Power Field-Effect Transistor, 24A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
STMicroelectronics NChannel EnhancedMOSTube STripFETseries, Vds=60 V, 24 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:24A; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
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- STM
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- STMICR
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- ST8
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- WAFERSCALE
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- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation60 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height2.4 mm
Length6.6 mm