가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STD120N4F6 | 450 | 1 | Cut Tape | ||||||||
| Verical | STD120N4F6 | 64 | 7 | |||||||||
| Avnet | STD120N4F6 | 0 | 2500 | 5h | ||||||||
| Future Electronics | STD120N4F6 | 0 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | STD120N4F6 | 0 | 2500 |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTD120N4LF6
Mosfet Transistor, N Channel, 80 A, 40 V, 0.004 Ohm, 10 V, 1 V |Stmicroelectronics STD120N4LF6
STMicroelectronicsSTD155N3H6
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STD120N4F6에 대한 설명입니다.
N-channel 40 V, 3.5 mOhm, 80 A STripFET F6 Power MOSFET in DPAK package
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 40V 80A DPAK
110W(Tc) 20V 4V@ 250¦ÌA 65nC@ 10 V 1N 40V 4m¦¸@ 40A,10V 80A 3.85nF@25V TO-252 6.6mm*6.2mm
MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
Automotive Power Discrete, 40V, 80A, DPAK, Tape and Reel
STMicroelectronics SCT
N-Channel Stripfet > 30 V To 350 V Rohs Compliant: Yes
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.85 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns