공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-05
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonAUIRFR3607TRL
MOSFET N-CH 75V 80A DPAK N-Channel 75 V 56A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
STMicroelectronicsSTD70N10F4
N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
InfineonAUIRFR3710ZTRL
MOSFET N-CH 100V 42A DPAK N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
VishayIRFR110PBF
Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)
설명
유통업체에서 제공한 STMicroelectronics STD100N10F7에 대한 설명입니다.
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in DPAK package
In a Pack of 5, N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STMicroelectronics STD100N10F7
Power MOSFET, N Channel, 100 V, 80 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
N-Channel 100V 8 mOhm Surface Mount STripFET VII DeepGATE Power Mosfet DPAK
Power Field-Effect Transistor, 32A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube STripFET H7series, Vds=100 V, 80 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
MOSFET, N-CH, 100V, 80A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: DeepGATE STripFET VII Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.369 nF
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation120 W
Rds On Max8 mΩ
Resistance8 MΩ
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time46 ns
Turn-On Delay Time27 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm