가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STB46N30M5 | 586 | 1 | Cut Tape | ||||||||
| DigiKey | 497-14964-1-ND | 1,001 | 1 | Cut Tape | ||||||||
| Future Electronics | STB46N30M5 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STB46N30M5 | 0 | 1K | 8h | ||||||||
| Arrow Electronics | STB46N30M5 | 0 | 1K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-11
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonIPB64N25S320ATMA1
Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount
InfineonIPB17N25S3100ATMA1
Power MOSFET, N Channel, 250 V, 17 A, 100 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
설명
유통업체에서 제공한 STMicroelectronics STB46N30M5에 대한 설명입니다.
Power MOSFET, N Channel, 300 V, 53 A, 0.037 ohm, TO-263 (D2PAK), Surface Mount
Automotive-grade N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package
Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant: Yes |Stmicroelectronics STB46N30M5
Power Field-Effect Transistor, 53A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)53 A
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)300 V
Input Capacitance4.24 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage300 V
Number of Elements1
PackagingTape and Reel
Power Dissipation250 W
Rds On Max40 mΩ
Schedule B8541290080