공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-07-30
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
InfineonIPB65R045C7ATMA1
MOSFET N-CH 650V 46A D2PAK N-Channel 650 V 46A (Tc) 227W (Tc) Surface Mount PG-TO263-3
InfineonIPB65R099C6ATMA1
MOSFET N-CH 650V 38A D2PAK N-Channel 650 V 38A (Tc) 278W (Tc) Surface Mount PG-TO263-3
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
VishaySIHB33N60EF-GE3
600V 33A 98m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
설명
유통업체에서 제공한 STMicroelectronics STB43N65M5에 대한 설명입니다.
Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
Trans MOSFET N-CH 650V 42A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 42A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 650V, 42A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (17-Dec-2015)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance63 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.4 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Manufacturer Package IdentifierD2PAK-0079457-A2
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation250 W
Rds On Max63 mΩ
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time73 ns
Dimensions
Height4.83 mm