가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB34N50DM2AG | 0 | 1 | Cut Tape | 13h | |||||||
| Microchip USA | STB34N50DM2AG | 1,689 | 600 | 5h | ||||||||
| Component Stockers USA | STB34N50DM2AG | 12,663 | >1wk | |||||||||
| Win Source | WS-STB34N50DM2AG | 6,970 | 11 | 14h | ||||||||
| Worldway Electronics | STB34N50DM2AG | 7,748 | 7 | Tape & Reel | 13h |
관련 부품
STMicroelectronicsSTB35N60DM2
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
STMicroelectronicsSTB37N60DM2AG
Power MOSFET, N Channel, 600 V, 28 A, 0.094 ohm, TO-263 (D2PAK), Surface Mount
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
VishaySIHB33N60EF-GE3
600V 33A 98m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
설명
유통업체에서 제공한 STMicroelectronics STB34N50DM2AG에 대한 설명입니다.
Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package
Automotive Power Discrete, 500V, 26A, D2PAK, Tape and Reel
STMicroelectronics SCT
Hv Mosfet Mdmesh |Stmicroelectronics STB34N50DM2AG
190W(Tc) 25V 5V@ 250¦ÌA 44nC@ 10 V 1N 500V 120m¦¸@ 12.5A,10V 26A 1.85nF@100V TO-263 10.4mm*9.35mm*4.6mm
Power Field-Effect Transistor, 26A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-channel MDmesh >350 V to 700 V
MOSFET, N-CH, 500V, 26A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (17-Dec-2015)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)26 A
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)500 V
Input Capacitance1.85 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation190 W
Rds On Max120 mΩ