공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-10-27
LTD Date2012-04-27
관련 부품
STMicroelectronicsSTB38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB36NM60ND
MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
설명
유통업체에서 제공한 STMicroelectronics STB30NM50N에 대한 설명입니다.
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D2PAK T/R
N CH POWER MOSFET, MDmesh II, 500V, 27A, D2PAK
27 A 500 V 0.115 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.74 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max115 mΩ
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time115 ns