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설명
유통업체에서 제공한 STMicroelectronics STB11NM60FDT4에 대한 설명입니다.
N-Channel 600 V 0.45 Ohm Surface Mount FDMesh Power MosFet - D2PAK-3
N-CHANNEL 600V - 0.4 - 11A Mdmesh(TM); Power MOSFET
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
TRANS MOSFET N-CH 600V 11A 3PIN D2PAK
Power MOSFET Transistors N-Ch 600 Volt 11 Amp
N-CH 600V 11A 450mOhm TO263-3 RoHSconf
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Board & Ref Design |Stmicroelectronics STB11NM60FDT4
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation160 W
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time16 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V