공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-18
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTE140NF20D
N-channel 200 V, 10 mOhm typ., 140 A STripFET(TM) II Power MOSFET (with fast diode) in an ISOTOP package
NXP SemiconductorsMRFE6VP100HR5
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VS25LR5
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.9 @ 512 MHz, 50 V, LDMOS, SOT1791
설명
유통업체에서 제공한 STMicroelectronics STAC4933에 대한 설명입니다.
300W - 50V High Ruggedness HF/VHF DMOS in STAC177 package
Transistor RF FET N-CH 200V 40A 30MHz 5-Pin STAC177B Tray
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
TO220FP 300W 30MHZ 50V RF DMOS
MOSF RF N CH 200V 40A STAC177B
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Body MaterialCeramic
MountScrew
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage200 V
Drain to Source Voltage (Vdss)200 V
Frequency30 MHz
Gain20 dB
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature200 °C
Max Power Dissipation795 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power300 W
PackagingBox
Test Current250 mA
Test Voltage50 V
Voltage Rating200 V