공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2019-05-29
LTD Date2019-11-29
설명
유통업체에서 제공한 STMicroelectronics SD56120에 대한 설명입니다.
120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package
Transistor RF FET N-CH 65V 14A 470MHz to 860MHz 5-Pin Case M-246
LdmoST Family 100 W N - Channel Enhancement - mode MOSFETs RF Power Transistor
Trans RF MOSFET N-CH 60V 14A 5-Pin Case M-246 Loose
RF & Microwave Transistors N-Ch 65 Volt 14 Amp
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Memory |Stmicroelectronics SD56120
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageM
MountScrew
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage65 V
Drain to Source Voltage (Vdss)65 V
Element ConfigurationDual
Frequency860 MHz
Gain14 dB
Gate to Source Voltage (Vgs)20 V
Input Capacitance82 pF
Max Frequency860 MHz
Max Operating Temperature200 °C
Max Output Power100 W
Max Power Dissipation217 W
Min Breakdown Voltage65 V
Min Operating Temperature-65 °C
Number of Elements2
Output Power100 W
Power Dissipation217 W
Test Current400 mA
Test Voltage28 V
Voltage Rating65 V
Voltage Rating (DC)65 V