공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-07-02
Lifecycle StatusObsolete (Last Updated: 2 months ago)
설명
유통업체에서 제공한 STMicroelectronics SCTH90N65G2V-7에 대한 설명입니다.
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Ciiva
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R
Power Field-Effect Transistor, 116A I(D), 650V, 0.024ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
SIC MOSFET, N-CH, 650V, 116A, H2PAK-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:116A; Drain Source Voltage Vds:650V; No. of Pins:7Pins; Rds(on) Test Voltage:18V; Power Dissipation:484W RoHS Compliant: Yes
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- STM
- SGS
- SGS THOMSON
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- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Number of Terminals7
Technical
Continuous Drain Current (ID)116 A
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)650 V
Max Operating Temperature175 °C
Max Power Dissipation484 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max24 mΩ