공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
관련 부품
STMicroelectronicsPD85015TR-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
설명
유통업체에서 제공한 STMicroelectronics PD20010TR-E에 대한 설명입니다.
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
STMicroelectronics SCT
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
Transistor RF FET N-CH 40V 5A 2GHz 3-Pin PowerSO-10RF T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
L BAND Si N-CHANNEL RF POWER MOSFET
RF MOSFET LDMOS 13.6V PWRSO-10RF
Rf Power |Stmicroelectronics PD20010TR-E
TRANS N-CH 40V POWERSO-10RF FORM
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Gain10 dB
Gate to Source Voltage (Vgs)15 V
Max Operating Temperature165 °C
Max Output Power15 W
Max Power Dissipation59 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage13.6 V
Output Power10 W
PackagingDigi-Reel®
Power Dissipation59 W
Power Gain11 dB
Test Current150 mA
Test Voltage13.6 V
Voltage Rating40 V