공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2013-05-03
LTD Date2013-11-02
설명
유통업체에서 제공한 STMicroelectronics MJE802에 대한 설명입니다.
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, DARL., NPN 80V 4A, SOT-32 PKG
Trans Darlington NPN 80V 8A 3-Pin(3+Tab) SOT-32 Tube
SILICON NPN POWER DARLINGTON TRANSISTORS
STMICROELECTRONICS MJE802 DARLINGTON TRANSISTORS
TRANS DARL NPN 80V 4A SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Sty
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageSOT-32
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)80 V
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation40 W
TerminationThrough Hole
Transition Frequency1 MHz
Voltage Rating (DC)80 V
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant