공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
관련 부품
onsemiKSC5302DTU
TRANS NPN 400V 2A TO220-3 / Bipolar (BJT) Transistor NPN 400 V 2 A 50 W Through Hole TO-220-3
설명
유통업체에서 제공한 STMicroelectronics MJE3055T에 대한 설명입니다.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 10 A, 75 W, TO-220, Through Hole
Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3+Tab) TO-220AB Tube
MJE3055T Series NPN 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar (Bjt) Single Transistor, Npn, 60 V, 2 Mhz, 75 W, 3 A, 400 Rohs Compliant: Yes |Stmicroelectronics MJE3055T
Power Bipolar, NPN, 4V, 400mA, TO-220, Tube
STMicroelectronics SCT
STMicroelectronics NPNTransistor, TO-220encapsulation, Through hole mounting, Maximum DC collector current10 A, maximum collector-emission voltage60 V
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 3A; DC Current Gain hFE: 400hFE; Transistor Case Style
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)70 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage8 V
Collector Emitter Voltage (VCEO)60 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency2 MHz
Gain Bandwidth Product2 MHz
hFE Min5
Max Collector Current10 A
Max Frequency2 MHz
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation75 W
Schedule B8541290080
Transition Frequency2 MHz
Voltage Rating (DC)60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm