가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | MJD45H11T4 | 114 | 1 | |||||||||
| Verical | MJD45H11T4 | 82,500 | 2500 | |||||||||
| Arrow Electronics | MJD45H11T4 | 273 | 1 | |||||||||
| Future Electronics | MJD45H11T4 | 2,500 | 2500 | Tape & Reel | ||||||||
| TME | MJD45H11T4 | 862 | 1 | 12h |
설명
유통업체에서 제공한 STMicroelectronics MJD45H11T4에 대한 설명입니다.
Bipolar Transistors (BJT); MJD45H11T4; STMICROELECTRONICS; PNP; 3; 80 V; 8 A
Bipolar (Bjt) Single Transistor, Pnp, -80 V, 20 W, -8 A, 40 Rohs Compliant: Yes |Stmicroelectronics MJD45H11T4
Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Low voltage complementary power transistor Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD45H11 Series PNP 80 V 8 A Complementary Silicon Transistor - TO-252
TRANSISTOR, BJT, PNP, -80V, -8A, TO252-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: -8A; DC Current Gain hFE: 40hFE; Transi
Transistor Polarity = PNP / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage-80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation20 W
Schedule B8541290080
Transition Frequency40 MHz
Voltage Rating (DC)-80 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm