설명
유통업체에서 제공한 STMicroelectronics IRF620에 대한 설명입니다.
Trans MOSFET N-CH 200V 6A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:75W; Rohs Compliant: Yes |Stmicroelectronics IRF620
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
Power Dissipation75 W
Rds On Max800 mΩ
Rise Time30 ns
Threshold Voltage4 V
Voltage Rating (DC)200 V