공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiKSC5027OTU
TRANS NPN 800V 3A TO-220 / Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
onsemiKSC5302DTU
TRANS NPN 400V 2A TO220-3 / Bipolar (BJT) Transistor NPN 400 V 2 A 50 W Through Hole TO-220-3
설명
유통업체에서 제공한 STMicroelectronics BUL216에 대한 설명입니다.
Bipolar (BJT) Single Transistor, NPN, 800 V, 4 A, 90 W, TO-220, Through Hole
Transistor General Purpose BJT NPN 800 Volt 4 Amp 3-Pin 3+ Tab TO-220 Tube
TRANS NPN 800V 4A TO-220 / Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3+Tab) TO-220AB Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL216 NPN HIGH VOLTAGE BIPOLAR TRANSISTOR, 4 A, 800 V, 3-PIN TO-220
Bipolar Transistors (BJT); BUL216; STMICROELECTRONICS; NPN; 3; 1.6 kV; 4 A
800V 90W 4A 12@400mA5V 3V@2A660mA NPN +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 4A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar, NPN, 5V, 660mA, TO-220, Tube
STMicroelectronics SCT
4 A 800 V NPN Si POWER TRANSISTOR TO-220AB
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO
TRANSISTOR, NPN, 800V, 4A, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:800V; Continuous Collector Current:4A; Power Dissipation:90W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight90.718474 mg
Technical
Collector Base Voltage (VCBO)1.6 kV
Collector Emitter Breakdown Voltage800 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)800 V
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min12
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation90 W
Schedule B8541290080
Voltage Rating (DC)800 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm