설명
유통업체에서 제공한 STMicroelectronics A2C25S12M3-F에 대한 설명입니다.
Trans IGBT Module N-CH 1200V 25A 197W 35-Pin ACEPACK-2 Tray
Transistor IGBT Module N-CH 1.2kV 25A ±20V Screw Tray
Avnet Japan
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
ACEPACK™ 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC, Tray
STMicroelectronics SCT
IGBT MOD 1200V 25A 197W ACEPACK2
IGBT MODULE 1200V 25A ACEPACK 2
ACEPACK2 25A 1.2KV IGBT MODULE
IC SUPERVISOR 1 CHANNEL SOT143-4
IGBT, MODULE, N-CH, 1.2KV, 25A; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 197W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Number of Terminals35
Technical
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current25 A
Forward Voltage2.95 V
Max Breakdown Voltage1.2 kV
Max Collector Current25 A
Max Operating Temperature150 °C
Max Power Dissipation197 W
Min Operating Temperature-40 °C
Number of Elements7
Power Dissipation197 W
Schedule B8541290080