공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-06
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2012-05-15
LTD Date2012-11-15
설명
유통업체에서 제공한 STMicroelectronics 2ST5949에 대한 설명입니다.
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Transistor GP BJT NPN 250V 17A 3-Pin (2+Tab) TO-3 Tray
High power NPN epitaxial planar bipolar transistor
Power Bjt, Npn, 250V, 17A, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:250V; Continuous Collector Current:17A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:25Mhz |Stmicroelectronics 2ST5949
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-3
MountChassis Mount, Through Hole
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)250 V
Collector Emitter Breakdown Voltage250 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)250 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency25 MHz
Gain Bandwidth Product25 MHz
hFE Min35
Max Collector Current17 A
Max Frequency25 MHz
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation250 W
Transition Frequency25 MHz
Dimensions
Height8.7 mm
Length39.5 mm
Width26.2 mm