PHOTOTRANSISTOR, SIDE VIEW; Transistor Polarity:NPN; Wavelength Typ:800nm; Power Consumption:75mW; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:6mA; Current Ic Typ:1.7mA; Dark Current:100nA; External Depth:2.8mm; External Length / Height:4.0mm; External Width:3.0mm; Fall Time tf:3.5µs; Half Angle:13°; Lead Diameter:0.4mm; Lead Length:17.5mm; Lead Spacing:2.54mm; Nom Sensitivity @ mW/cm²:1.7mA @ 1mW / cm²; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Package / Case:Radial; Peak Spectral Response Wavelength:800nm; Peak Wavelength:800nm; Power Dissipation Pd:75mW; Power Dissipation Pd:75mW; Reverse Protection Voltage:6V; Rise Time:3µs; Storage Temperature Max:85°C; Storage Temperature Min:-40°C; Transistor Type:Photo