PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:800nm; Power Consumption:75mW; Viewing Angle:35°; Transistor Case Style:Side Looking; No. of Pins:2; Angle of Half Sensitivity ±:35°; Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:20A; Current Ic Typ:400mA; Dark Current:100nA; External Depth:1.5mm; External Length / Height:3.5mm; External Width:3mm; Fall Time tf:3.5µs; Lead Length:17.5mm; Lead Spacing:2.54mm; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Peak Wavelength:800nm; Rise Time:3µs; Storage Temperature Max:+85°C; Storage Temperature Min:-40°C; Transistor Type:Photo