가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 1855-1048-1-ND | 237 | 1 | Cut Tape | ||||||||
| TME | GP2S60B-SHA-0 | 8,000 | 2K | 20h | ||||||||
| Future Electronics | GP2S60B | 0 | 2K | Tape & Reel | ||||||||
| Mouser | 852-GP2S60B | 16,886 | 1 | Tape & Reel | ||||||||
| Win Source | WS-GP2S60B | 50,000 | 170 | 6h |
관련 부품
OsramSFH 3410-1/2-Z
Silicon NPN Phototransistor with Vλ Characteristics, -40 to 100 °C, 2 x 4.6 x 1.1 mm
ams-OSRAMSFH 3410-3/4-Z
Silicon NPN Phototransistor with Vλ Characteristics, -40 to 100 °C, 2 x 4.6 x 1.1 mm
OsramSFH 3400-Z
Ambient Light Sensor PhototransistorChip Silicon 850nm Automotive AEC-Q102 3-Pin DIL SMT T/R
ams-OSRAMSFH 3400-2/3-Z
Ambient Light Sensor Phototransistor Chip Silicon 850nm 3-Pin DIL SMT T/R
설명
유통업체에서 제공한 Sharp GP2S60B에 대한 설명입니다.
SMT Phototransistor output Compact Reflective Photo interrupter
20mA 0.7mm SMD-4P Reflective Optical Interrupters ROHS
Photointerrupter Reflective Phototransistor 4-Pin SMT
Reflective Photoelectric Switch
Photointerrupters Photointerrupter 65~130uA
Transistor Output Optocoupler, 1-Element
PHOTOINTERRUPTER TRANS OUT 4-PIN SMD
제조업체 별칭
Sharp에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Sharp는 다음 이름으로도 알려져 있습니다:
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
기술 사양
Physical
Case/PackageSMD/SMT
Contact PlatingGold
MountSurface Mount
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time20 µs
Forward Current50 mA
Forward Voltage1.2 V
Max Breakdown Voltage35 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Elements1
Output TypePhototransistor
Power Dissipation100 mW
Response Time20 µs
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time20 µs
Sensing Distance711.2 µm
Wavelength950 nm