공급망
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-03-20
LTD Date2013-06-30
설명
유통업체에서 제공한 Sharp GP2S40J0000F에 대한 설명입니다.
Diffuse Photoelectric Sensor, 3mm Min, 3mm Max, 0.50-3mA, Rectangular, Through Hole Mount
Photointerrupter Reflective Phototransistor 4-Pin Ultra Compact DIP
Photointerrupters Photointerrupter 3.0mm
PHOTOINTERRUPTER REFLEC 3MM PC
PHOTOINTERRUPTER, SUB, MIN; No. of Channels:1; Output Type:Transistor; Input Current:50mA; Voltage, Output Max:35V; Case Style:DIP-4; Operating Temperature Range:-25°C to +85°C; Collector-to-Emitter Breakdown Voltage:35V; Current Ic Max:3mA; Current, If Max:50mA; External Depth:4.0mm; External Length / Height:2.4mm; No. of Pins:4; Optocoupler Type:Opto Switch; Power Dissipation:175mW; Reflective Sensing Distance:4mm; Temp, Op. Max:85°C; Temp, Op. Min:-25°C; Time, Fall:50µs; Time, Rise:50µs; Voltage, Vf Max:1.4V; Voltage, Vf Typ:1.2V; Width, External:4.0mm; Current, Ic Typ:20mA; Max Reverse Leakage Current:10.0µA
제조업체 별칭
Sharp에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Sharp는 다음 이름으로도 알려져 있습니다:
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
기술 사양
Physical
Case/PackageDIP
Contact PlatingCopper, Tin
MountThrough Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Current Rating20 mA
Fall Time50 µs
Forward Current20 mA
Forward Voltage1.2 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Supply Voltage1.4 V
Min Operating Temperature-25 °C
Min Supply Voltage1.2 V
Number of Elements1
Output Current20 mA
Output TypePhototransistor
Power Dissipation100 mW
Response Time50 µs
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time50 µs
Sensing Distance3 mm
Wavelength950 nm
Dimensions
Height2.4 mm
Length4 mm