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OsramSFH 3410-1/2-Z
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설명
유통업체에서 제공한 Sharp GP1S092HCPIF에 대한 설명입니다.
Sharp Slot type photoelectric switch, 1passageway, 2mmGroove width, surface mount, 2.6 x 4.5 x 2.9mm
35 V 20 mA 079 (2mm) Phototransistor Compact Transmissive Photointerrupter"
Photointerrupter Transmissive 2mm Phototransistor 4-Pin SubMiniature SMT
Channel Type Photoelectric Switch (Logic Output)
2mm SMD-4P Photointerrupters - Slot Type - Transistor Output ROHS
Transistor Output Slotted Switch, 1-Channel, 2mm Slot Width
Photointerrupters Photointerrupter SMT 2.0mm Gap
Fork coupler [Sharp] GP 1S092HCPIF Fork coupler
Photointerrupter 2mm Trans.; GP1S092HCPIF
SENSOR OPT SLOT PHOTOTRANS 4SMD
シャープ GP1S092HCPIF 透過形フォトマイクロセンサ
SENSOR OPTO SLOT 2MM TRANS SMD
PHOTOINTERRUPTER, SMD; No. of Channels:1; Output Type:Transistor; Input Current:50mA; Voltage, Output Max:35V; Case Style:Slotted Switch; Operating Temperature Range:-25°C to +85°C; Collector-to-Emitter Breakdown Voltage:35V; Current Ic Max:400µA; Current, If Max:50mA; External Depth:2.6mm; External Length / Height:2.9mm; No. of Pins:4; Optocoupler Type:Opto Switch; Power Dissipation:100mW; Temp, Op. Max:85°C; Temp, Op. Min:-25°C; Termination Type:SMD; Time, Fall:50µs; Time, Rise:50µs; Voltage, Vf Max:1.4V; Voltage, Vf Typ:1.2V; Width, External:4.5mm; Width, Gap:2mm; Current, Ic Typ:20mA; Max Reverse Leakage Current:10.0µA
제조업체 별칭
Sharp에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Sharp는 다음 이름으로도 알려져 있습니다:
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
기술 사양
Physical
Case/PackageSMD/SMT
Contact PlatingCopper, Tin
MountSurface Mount
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time150 µs
Forward Current50 mA
Forward Voltage1.2 V
Max Breakdown Voltage35 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Output Current20 mA
Min Operating Temperature-25 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current20 mA
PackagingCut Tape
Power Dissipation100 mW
Response Time50 µs
Reverse Breakdown Voltage6 V
Rise Time150 µs
Sensing Distance2.0066 mm
Wavelength950 nm
Dimensions
Height2.9 mm
Length2.6 mm
Width4.5 mm