설명
유통업체에서 제공한 Sharp GP1S096HCZ0F에 대한 설명입니다.
Photointerrupter Transmissive 1mm Phototransistor 4-Pin
Transistor Output Slotted Switch, 1-Channel, 1mm Slot Width
SHARP GP1S096HCZ0F Transmissive Photo Interrupter, Phototransistor, Through Hole, 1 mm, 0.3 mm, 50 mA, 6 V
SENSOR OPT SLOT PHOTOTRAN PCB MT
SENSOR OPTO SLOT 1MM TRANS THRU
PHOTO INTERRUPTER, TRANSMISSIVE, 1MM; Sensor Output: Phototransistor; Sensor Mounting: Through Hole; Gap Width: 1mm; Aperture Width: 0.3mm; Forward Current If: 50mA; Reverse Voltage Vr: 6V; Forward Voltage: 1.2V; Product Range:
PHOTOINTERRUPTER; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:35V; Opto Case Style:Through Hole; No. of Pins:4; Collector Emitter Voltage V(br)ceo:35V; Continuous Collector Current Ic Max:20mA; External Depth:2.6mm; External Length / Height:2.9mm; External Width:3.5mm; Fall Time tf:50µs; Forward Voltage VF Max:1.4V; Gap Width:1mm; Lead Spacing:2.55mm; Operating Temperature Range:-25°C to +85°C; Output Type:Phototransistor; Power Dissipation Pd:100mW; Power Dissipation Pd:100mW; Rise Time:50µs; Row Pitch:2mm; Voltage Vf Typ:1.2V
제조업체 별칭
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- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
기술 사양
Physical
Contact PlatingCopper, Tin
MountThrough Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time150 µs
Forward Current50 mA
Forward Voltage1.2 V
Input Current20 mA
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current20 mA
Output Voltage20 V
Power Dissipation100 mW
Response Time50 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Sensing Distance990.6 µm
Dimensions
Height2.9 mm
Width3.5 mm